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| CZT2000 NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCES VEBO IC PD TJ,Tstg JA UNITS V V V mA W oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 200 200 10 600 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO BVCES VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hFE TEST CONDITIONS VCB=180V VBE=10V IC=1.0mA IC=20mA, IB=25A IC=80mA, IB=40A IC=160mA, IB=100A VCE=5.0V, IC=160mA VCE=5.0V, IC=100A VCE=5.0V, IC=10mA VCE=5.0V, IC=160mA MIN MAX 500 100 0.9 1.1 1.2 2.0 3,000 3,000 3,000 UNITS nA nA V V V V V 200 298 All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 299 |
Price & Availability of CZT2000
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